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PH8230E,115

Part No PH8230E,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 67A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 14nC @ 5V
Max Input Capacitance 1400pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 10A, 10V
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1087766-PH8230E,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PH8230E,115 CAD Model

Description

The PH8230E,115 is an N-channel MOSFET from Nexperia USA Inc..

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 67A @ 25°C
  • Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • On-Resistance: 8.2mΩ @ 10A and 10V gate-source voltage
  • Packages: LFPAK56 and Power-SO8

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2687 $57.7705
525+ $0.2205 $115.7625
815+ $0.2136 $174.0840
1,120+ $0.2067 $231.5040
1,450+ $0.1998 $289.7100
1,935+ $0.1792 $346.7520
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,870 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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