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Same model may have multiple batches, images only for reference.
PHB66NQ03LT,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHB66NQ03LT,118

Part No PHB66NQ03LT,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 66A D2PAK
Datasheet
PHB66NQ03LT,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 12nC @ 5V
Max Input Capacitance 860pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1087789-PHB66NQ03LT,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHB66NQ03LT,118 CAD Model

Description

The Nexperia USA Inc. PHB66NQ03LT,118 is an N-channel MOSFET with a power dissipation of 93W (Tc).

  • Maximum Gate Charge: 12nC @ 5V
  • Maximum Input Capacitance: 860pF @ 25V
  • Maximum Rds On at Id, Vgs: 10.5 mOhm @ 25A, 10V
  • Drain-Source Breakdown Voltage: 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: D2PAK

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