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PHC21025,118

Part No PHC21025,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Cut Reel
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A, 2.3A
Maximum Rds On at Id,Vgs 100 mOhm @ 2.2A, 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 250pF @ 20V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1042399-PHC21025,118
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Communications & Networking, Consumer Electronics, Power Management
Ultra Librarian 3D Model Ultra Librarian PHC21025,118 CAD Model

Description

The Nexperia USA Inc. PHC21025,118 is a discrete semiconductor product that is commonly used in industrial, communications and consumer electronics for power management.

  • Supply and Demand: Balanced
  • Channel Type: N and P-channel FET
  • Gate Level: Logic Level Gate
  • Operating Temperature (Max): 150°C
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3.5A and 2.3A
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Input Capacitance: 250pF @ 20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9413 $61.1845
150+ $0.7727 $115.9050
235+ $0.7484 $175.8740
320+ $0.7242 $231.7440
415+ $0.6999 $290.4585
555+ $0.6283 $348.7065
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,900 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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