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Same model may have multiple batches, images only for reference.
PHD20N06T,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHD20N06T,118

Part No PHD20N06T,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 18A DPAK
Datasheet
PHD20N06T,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 422pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 51W (Tc)
Maximum Rds On at Id,Vgs 77 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1087797-PHD20N06T,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHD20N06T,118 CAD Model

Description

The Nexperia PHD20N06T,118 is an N-Channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 18A @ 25°C.

  • Manufacturer: Nexperia
  • Channel Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 18A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 11nC @ 10V
  • Max Rds On @ Id,Vgs: 77 mOhm @ 10A, 10V
  • Power Dissipation: 51W (Tc)

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