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Same model may have multiple batches, images only for reference.
PHT4NQ10T,135 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHT4NQ10T,135

Part No PHT4NQ10T,135
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 3.5A SOT223
Datasheet
PHT4NQ10T,135 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 7.4nC @ 10V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.9W (Tc)
Maximum Rds On at Id,Vgs 250 mOhm @ 1.75A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1087845-PHT4NQ10T,135
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian PHT4NQ10T,135 CAD Model

Description

The Nexperia USA Inc. PHT4NQ10T,135 is an electronic component manufactured by Nexperia USA Inc. This product is a MOSFET with N-channel polarity.

  • Power Dissipation: 6.9W (Tc)
  • Temperature Range: -65°C to 150°C (TJ)
  • Case / Package: SOT-223
  • Dimension: TO-261-4, TO-261AA
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 3.5A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 7.4nC @ 10V
  • Max Input Capacitance: 300pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 250 mOhm @ 1.75A, 10V

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