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Same model may have multiple batches, images only for reference.
PIMZ2,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PIMZ2,115

Part No PIMZ2,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A 6TSOP
Datasheet
PIMZ2,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 1mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz, 190MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1089288-PIMZ2,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PIMZ2,115 CAD Model

Description

The PIMZ2,115 is an electronic component manufactured by Nexperia USA Inc.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Category: Discrete Semiconductor Products
  • Win Source Part Number: 1089288-PIMZ2,115
  • Fake Products Threat: Moderate
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Transition Frequency: 100MHz and 190MHz
  • Polarity: NPN and PNP Transistor
  • Maximum Current Collector: 150mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 300mW

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