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PMCPB5530X,115

Part No PMCPB5530X,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 6HUSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.3A, 3.4A
Maximum Rds On at Id,Vgs 34 mOhm @ 3A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 21.7nC @ 4.5V
Max Input Capacitance 660pF @ 10V
Maximum Power Dissipation 490mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1089501-PMCPB5530X,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMCPB5530X,115 CAD Model

Description

The Nexperia PMCPB5530X,115 is a N and P-Channel Logic Level Gate FET.

  • Case/Package: DFN2020-6
  • Maximum Power Dissipation: 490mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (N-Channel): 5.3A @ 25°C
  • Continuous Drain Current (P-Channel): 3.4A @ 25°C
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Max Gate Charge: 21.7nC @ 4.5V
  • Maximum Input Capacitance: 660pF @ 10V
  • Maximum Rds On: 34 mOhm @ 3A, 4.5V
  • Category: Discrete Semiconductor Products
  • Popularity: High
  • Status: Active
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0044 $50.1100
54+ $1.8776 $101.3904
83+ $1.8142 $150.5786
119+ $1.6873 $200.7887
154+ $1.6239 $250.0806
193+ $1.5604 $301.1572
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 86,350 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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