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TK12J60U(F)

Part No TK12J60U(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 600V 12A TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 400mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 720pF at 10V
Power Dissipation (Maximum) 144W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-3P(N)
Manufacturer Package TO-3P-3, SC-65-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 735213-TK12J60U(F)
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK12J60U(F) CAD Model

Description

The Toshiba Semiconductor and Storage 735213-TK12J60U(F) is an N-channel MOSFET transistor.

  • Vds - Drain-Source Breakdown Voltage: 600V
  • Id - Continuous Drain Current: 12A
  • Rds On (Maximum) @ Id, Vgs: 400mOhm @ 6A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 720pF @ 10V
  • Suitable for Use in: Discrete Semiconductor Products
  • Case: TO-3P(N)

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.0330 $72.1320
8+ $14.7956 $118.3648
13+ $14.3336 $186.3368
17+ $13.8716 $235.8172
22+ $13.4084 $294.9848
29+ $12.0224 $348.6496
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,900 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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