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Same model may have multiple batches, images only for reference.
PMDPB70EN,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMDPB70EN,115

Part No PMDPB70EN,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 3.5A 6DFN
Datasheet
PMDPB70EN,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 57 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 4.5nC @ 10V
Max Input Capacitance 130pF @ 15V
Maximum Power Dissipation 510mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1089513-PMDPB70EN,115
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMDPB70EN,115 CAD Model

Description

The Nexperia USA Inc. PMDPB70EN,115 is an obsolete (EOL) electronic component that is mainly used in power management applications.

  • Manufacturer: Nexperia USA Inc.
  • Maximum Power Dissipation: 510mW
  • Gate-Source Threshold Voltage: 2.5V @ 250μA

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