The PMDT290UNE,115 is a N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. It's designed for low-voltage, low-current switching applications where efficiency and space-saving are critical. This MOSFET is available in a small SOT-666 Surface-Mounted Device (SMD) package, making it ideal for portable and miniaturized electronic devices.

Applications

• Load switch
• High-speed line driver
• Portable equipment
• DC-DC conversion
• Power management in battery-operated devices
• Logic level translation

Features

• N-channel enhancement mode MOSFET
• Low threshold voltage
• Fast switching speed
• Ultra-small SOT-666 package
• AEC-Q101 qualified

Benefits

• Reduces board space due to its small package size.
• Enhances energy efficiency in low-voltage applications.
• Facilitates high-speed switching due to fast response time.
• Increases reliability with AEC-Q101 qualification for automotive applications.
• Simplified gate drive requirements due to low threshold voltage.

Additional Details

The PMDT290UNE,115 features a low on-state resistance (RDS(on)), which minimizes power dissipation during switching. Its drain-source voltage (VDS) and gate-source voltage (VGS) ratings are crucial for safe operation within specified limits. The device's low threshold voltage ensures that it can be easily driven by logic-level signals. The SOT-666 package allows for automated placement and soldering, improving manufacturing efficiency. The product is lead-free and RoHS compliant. The continuous drain current is typically around 1.1A, and the pulsed drain current can reach higher values depending on the specific conditions.