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PMGD175XNEX

Part No PMGD175XNEX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET ARRAY 2NCH 30V 6-TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 870mA (Ta)
Maximum Rds On at Id,Vgs 252 mOhm @ 900mA, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 1.65nC @ 4.5V
Max Input Capacitance 81pF @ 15V
Maximum Power Dissipation 260mW (Ta)
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1089674-PMGD175XNEX
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMGD175XNEX CAD Model

Description

The FET has a 2 N-channel (dual) FET type with a standard FET feature.

  • FET Type: 2 N-channel (dual)
  • FET Feature: Standard
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 870mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.25V @ 250μA
  • Maximum Gate Charge: 1.65nC @ 4.5V
  • Maximum Input Capacitance: 81pF @ 15V
  • Maximum Rds on @ Id,Vgs: 252 mOhm @ 900mA, 4.5V
  • Mounting: SMD (SMT)
  • Package: 6-TSSOP
  • Popularity: Medium
  • Supply and Demand Status: sufficient
  • Category: Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 260mW (Ta)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4338 $50.1830
85+ $1.1765 $100.0025
135+ $1.1397 $153.8595
185+ $1.1030 $204.0550
235+ $1.0662 $250.5570
315+ $0.9559 $301.1085
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 157,490 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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