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Same model may have multiple batches, images only for reference.
PMN80XP,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMN80XP,115

Part No PMN80XP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.5A SC-74
Datasheet
PMN80XP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7.5nC @ 4.5V
Max Input Capacitance 550pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 385mW (Ta)
Maximum Rds On at Id,Vgs 102 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089718-PMN80XP,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMN80XP,115 CAD Model

Description

The Nexperia USA Inc. PMN80XP,115 is a P-channel MOSFET designed for various applications.

  • Channel Type: P-channel
  • Supply and Demand Status: Sufficient
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.5A (Ta)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2867 $50.1725
425+ $0.2353 $100.0025
660+ $0.2279 $150.4140
910+ $0.2206 $200.7460
1,175+ $0.2132 $250.5100
1,570+ $0.1912 $300.1840
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Availability: 1,430 pieces
MOQ: 175 pcs
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