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PMPB10ENZ Real Image1 PMPB10ENZ Real Image2
Same model may have multiple batches, images only for reference.
PMPB10ENZ Real Image1 PMPB10ENZ Real Image2
PMPB10ENZ Real Image1 PMPB10ENZ Real Image2
Same model may have multiple batches, images only for reference.

PMPB10ENZ

Part No PMPB10ENZ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A DFN2020MD-6 / N-Channel 30 V 10A (Ta) 1.8W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
Datasheet
PMPB10ENZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 15 V
Power Dissipation (Max) 1.8W (Ta), 12.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DFN2020MD-6
Package / Case 6-UDFN Exposed Pad
Base Product Number PMPB10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 934660554184
Standard Package 3,000
Win Source Part Number 971218-PMPB10ENZ
Ultra Librarian 3D Model Ultra Librarian PMPB10ENZ CAD Model

Description

The PMPB10ENZ is an N-channel MOSFET transistor from Nexperia USA Inc.

  • Packaging: Tape and Reel
  • Standard Package: 3,000
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum On-Resistance: 12mOhm @ 9A and 10V
  • Gate-Source Threshold Voltage: 2V @ 250µA
  • Power Dissipation: 1.8W @ Ta and 12.5W @ Tc
  • Gate Charge: 20.6 nC @ 10V
  • Input Capacitance: 840 pF @ 15V

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730+ $0.1591 $116.1430
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1,550+ $0.1491 $231.1050
2,005+ $0.1441 $288.9205
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