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Same model may have multiple batches, images only for reference.
PMPB19XP,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMPB19XP,115

Part No PMPB19XP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7.2A 6DFN
Datasheet
PMPB19XP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 43.2nC @ 4.5V
Max Input Capacitance 2890pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
Maximum Rds On at Id,Vgs 22.5 mOhm @ 7.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DFN2020MD (2x2)
Dimension 6-UDFN Exposed Pad
Win Source Part Number 1089731-PMPB19XP,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PMPB19XP,115 CAD Model

Description

The Nexperia USA Inc. PMPB19XP,115 is a P-channel MOSFET that is designed for use in discrete semiconductor products.

  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 7.2A @ 25°C
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Rds On @ Id,Vgs: 22.5 mOhm @ 7.2A, 4.5V
  • Maximum Power Dissipation: 1.7W (Ta), 12.5W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Input Capacitance: 2890pF @ 10V
  • Suitable for: Use in a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2562 $51.2400
480+ $0.2102 $100.8960
740+ $0.2036 $150.6640
1,015+ $0.1971 $200.0565
1,315+ $0.1905 $250.5075
1,760+ $0.1708 $300.6080
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