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Same model may have multiple batches, images only for reference.
PMV28UNEAR Real Image
Same model may have multiple batches, images only for reference.

PMV28UNEAR

Part No PMV28UNEAR
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V TO-236AB
Datasheet
PMV28UNEAR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 490pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 510mW (Ta), 3.9W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 4.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089785-PMV28UNEAR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV28UNEAR CAD Model

Description

The PMV28UNEAR is an N-channel MOSFET manufactured by Nexperia USA Inc.

  • Product Type: Discrete Semiconductor
  • Case/Package: TO-236AB (SOT23)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.7A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 10nC @ 4.5V
  • Maximum Input Capacitance: 490pF @ 10V
  • Maximum Rds On: 32 mOhm @ 4.7A, 4.5V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package Variation: TO-236-3, SC-59, SOT-23-3
  • Supply and Demand Status: Sufficient

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