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Same model may have multiple batches, images only for reference.
PMXB75UPEZ Real Image
Same model may have multiple batches, images only for reference.

PMXB75UPEZ

Part No PMXB75UPEZ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V DFN1010D-3G
Datasheet
PMXB75UPEZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 608pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 317mW (Ta), 8.33W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 2.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN1010D-3
Dimension 3-XDFN Exposed Pad
Win Source Part Number 1089812-PMXB75UPEZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMXB75UPEZ CAD Model

Description

The PMXB75UPEZ is a P-Channel MOSFET manufactured by Nexperia USA Inc.

  • Supply and Demand Status: balanced
  • Power Dissipation: 317mW (Ta), 8.33W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 85 mOhm @ 2.9A, 4.5V
  • Package Type: DFN1010D-3
  • Dimension: 3-XDFN Exposed Pad

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2376 $51.0840
450+ $0.2226 $100.1700
700+ $0.2151 $150.5700
1,000+ $0.2000 $200.0000
1,300+ $0.1925 $250.2500
1,625+ $0.1850 $300.6250
!
Prices are subject to market and will be confirmed after the order is placed.
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Availability: 408,881 pieces
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