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Same model may have multiple batches, images only for reference.
PSMN004-60B,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN004-60B,118

Part No PSMN004-60B,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
PSMN004-60B,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 168nC @ 10V
Max Input Capacitance 8300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 3.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090315-PSMN004-60B,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN004-60B,118 CAD Model

Description

The PSMN004-60B,118 is a N-Channel MOSFET technology component from Nexperia USA Inc.

  • Type: Discrete Semiconductor
  • Status: Active
  • Power Dissipation: 230W (Tc)
  • Mounting Type: SMD (SMT)
  • Drive Voltage: 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package/Case: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Maximum Rds On @ Id,Vgs: 3.6 mOhm @ 25A, 10V

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Quantity Unit Price Ext. Price
2+ $38.3194 $76.6388
4+ $31.4414 $125.7656
6+ $30.4585 $182.7510
8+ $29.4768 $235.8144
11+ $28.4939 $313.4329
14+ $25.5463 $357.6482
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