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Same model may have multiple batches, images only for reference.
PSMN030-60YS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN030-60YS,115

Part No PSMN030-60YS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 29A LFPAK
Datasheet
PSMN030-60YS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 686pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 24.7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090346-PSMN030-60YS,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN030-60YS,115 CAD Model

Description

The Nexperia USA Inc. PSMN030-60YS,115 is an N-Channel MOSFET that is designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 29A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Rds On: 24.7 mOhm @ 15A, 10V
  • Mounting Technology: SMD (SMT)
  • Package: LFPAK56, Power-SO8
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
145+ $0.3468 $50.2860
310+ $0.3245 $100.5950
480+ $0.3133 $150.3840
690+ $0.2909 $200.7210
895+ $0.2797 $250.3315
1,120+ $0.2685 $300.7200
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