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Same model may have multiple batches, images only for reference.
PSMN045-80YS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN045-80YS,115

Part No PSMN045-80YS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 24A LFPAK
Datasheet
PSMN045-80YS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 12.5nC @ 10V
Max Input Capacitance 675pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090354-PSMN045-80YS,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN045-80YS,115 CAD Model

Description

The PSMN045-80YS,115 is an N-channel MOSFET from Nexperia USA Inc. Nexperia USA Inc.

  • Channel Type: N-channel MOSFET
  • Package: LFPAK56, Power-SO8
  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 24A (Tc)
  • Maximum Gate Charge: 12.5nC @ 10V
  • Maximum Input Capacitance: 675pF @ 40V
  • Maximum Rds On @ Id,Vgs: 45 mOhm @ 5A, 10V
  • Ideal For: Applications that require high power and low Rds On

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