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Same model may have multiple batches, images only for reference.
PSMN130-200D,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN130-200D,118

Part No PSMN130-200D,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 20A DPAK
Datasheet
PSMN130-200D,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 2470pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 130 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1090361-PSMN130-200D,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN130-200D,118 CAD Model

Description

The PSMN130-200D,118 is an N-channel MOSFET manufactured by Nexperia USA Inc. It has a drain-source breakdown voltage of 200V and a maximum continuous drain current of 20A at 25°C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Continuous Drain Current: 20A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum Input Capacitance: 2470pF @ 25V
  • Maximum Rds On: 130 mOhm @ 25A, 10V
  • Power Dissipation (max): 150W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Packaging: DPAK
  • Manufacturer: Nexperia USA Inc.

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