Nexperia USA Inc. presents a MOSFET technology, part number 1090368-PSMN1R2-25YLC,115.

• Polarity: N-channel
• Power Dissipation (max): 179W (Tc)
• Category: Discrete semiconductor products
• Drive Voltage (max Rds On, min Rds On): 4.5V, 10V
• Status: Active
• Temperature Range: -55°C to 175°C (TJ)
• Case or Package: LFPAK56, Power-SO8
• Dimension: SC-100, SOT-669
• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current @ 25°C: 100A (Tc)
• Gate-Source Threshold Voltage: 1.95V @ 1mA
• Max Gate Charge: 66nC @ 10V
• Max Input Capacitance: 4173pF @ 12V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 1.3 mOhm @ 25A, 10V
• Supply and Demand Status: Balanced