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Same model may have multiple batches, images only for reference.
PSMN1R8-30PL,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN1R8-30PL,127

Part No PSMN1R8-30PL,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V TO220AB
Datasheet
PSMN1R8-30PL,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 10180pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090380-PSMN1R8-30PL,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN1R8-30PL,127 CAD Model

Description

The Nexperia USA Inc. PSMN1R8-30PL,127 MOSFET is a N-Channel polarity device that comes in a TO-220AB package.

  • Polarity: N-Channel
  • Package: TO-220AB
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Rds On at Id,Vgs: 1.8 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 2.15V @ 1mA
  • Maximum Gate Charge: 170nC @ 10V
  • Maximum Input Capacitance: 10180pF @ 12V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 270W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Widely Used in: Discrete Semiconductor Products

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