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Same model may have multiple batches, images only for reference.
PSMN8R5-100PSQ Real Image
Same model may have multiple batches, images only for reference.

PSMN8R5-100PSQ

Part No PSMN8R5-100PSQ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO-220 / Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220AB Rail
Datasheet
PSMN8R5-100PSQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 111nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5512pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 263W (Tc)
Rds On (Maximum) @ Id, Vgs 8.5 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 792639-PSMN8R5-100PSQ
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN8R5-100PS
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian PSMN8R5-100PSQ CAD Model

Description

The Nexperia USA Inc. PSMN8R5-100PSQ is a N-Channel MOSFET transistor from Nexperia USA Inc.

  • Continuous Drain Current @ 25°C: 100A
  • Maximum Drain-Source Voltage: 100V
  • Gate-Source Voltage Threshold: 4V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 263W @ Tc
  • Package / Case: TO-220-3
  • Mounting Type: Through Hole

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