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Same model may have multiple batches, images only for reference.
SI2304DS,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

SI2304DS,215

Part No SI2304DS,215
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.7A SOT23
Datasheet
SI2304DS,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 4.6nC @ 10V
Max Input Capacitance 195pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 830mW (Tc)
Maximum Rds On at Id,Vgs 117 mOhm @ 500mA, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095728-SI2304DS,215
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI2304DS,215 CAD Model

Description

The Nexperia USA Inc. SI2304DS,215 is an N-channel MOSFET designed for use in power management.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.7A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate Charge: 4.6nC @ 10V
  • Maximum Rds On @ Id,Vgs: 117 mOhm @ 500mA, 10V
  • Power Dissipation: 830mW (Tc)
  • Package: TO-236AB (SOT23)
  • Mounting: SMD (SMT) Technology
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Alternative Parts: NDS355AN, PMV117EN, and SI2304DS/DG
  • Package Quantity: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1351 $58.0930
1,045+ $0.1109 $115.8905
1,615+ $0.1074 $173.4510
2,225+ $0.1040 $231.4000
2,875+ $0.1005 $288.9375
3,850+ $0.0901 $346.8850
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