The NXP 2N7002BKS,115 is a high-performance, small-signal N-channel MOSFET transistor designed for switching applications in compact electronic devices. This MOSFET is part of NXP's extensive range of field-effect transistors, which are known for their low on-resistance and high switching speed.

Key Features

• Device Type: N-Channel MOSFET
• Package: 6-TSSOP, SC-88, SOT-363
• Drain-Source Voltage (V<sub>DS): 60V
• Continuous Drain Current (I<sub>D): 300mA
• On-Resistance (R<sub>DS(on)): 5 Ohms at V<sub>GS = 10V
• Gate-Source Voltage (V<sub>GS): ±20V
• Power Dissipation (P<sub>D): 830mW
• Operating Temperature Range: -55°C to +150°C
• Fast Switching Speed

Applications

The 2N7002BKS,115 is suitable for a wide range of applications, including:

• Load/Power Switching
• Power Management
• Motor Control
• DC-DC Converters
• Automotive Systems
• Portable Devices

Reliability and Efficiency

With its low on-resistance and high thermal performance, the 2N7002BKS,115 ensures efficient power usage and minimal heat generation, making it an ideal choice for power-sensitive applications. Its robustness is further enhanced by its ability to operate over a wide temperature range, ensuring reliability even under harsh conditions.

Design Flexibility

The compact 6-pin SOT-363 package allows for high-density mounting, making the 2N7002BKS,115 an excellent choice for space-constrained applications. Its compatibility with various logic levels also provides designers with greater flexibility in circuit integration.

Environmental Compliance

Committed to environmental sustainability, NXP ensures that the 2N7002BKS,115 complies with RoHS regulations, which restricts the use of certain hazardous substances in electronic equipment.