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2N7002BKW

Part No 2N7002BKW
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 310MA SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 275mW (Ta)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 500mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Dimension SC-70, SOT-323
Win Source Part Number 095883-2N7002BKW
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N7002BKW CAD Model

Description

The 2N7002BKW is a high-performance, small-signal N-channel MOSFET produced by NXP Semiconductors, a leader in the electronics industry. This field-effect transistor (FET) is designed to deliver efficient power control and switching with a low on-resistance and a high threshold voltage. It is widely used in a variety of applications, including power management, load switching, and signal processing.

Key Features

  • Low Threshold Voltage: The 2N7002BKW has a low threshold voltage, making it suitable for low-voltage applications.
  • High-Speed Switching: With fast switching speeds, this MOSFET is ideal for high-frequency applications.
  • Low On-Resistance: Its low on-resistance ensures minimal power loss and heat generation during operation.
  • Surface-Mount Package: The device comes in a compact SOT-323 package, which is perfect for space-constrained applications.
  • Robust Performance: The 2N7002BKW is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring reliable performance in challenging conditions.

Applications

Due to its versatile nature, the 2N7002BKW MOSFET is suitable for a wide range of applications. It is commonly used in:

  • Power management systems
  • DC/DC converters
  • Battery-powered devices
  • Motor control circuits
  • Load switching applications
  • Signal processing

Technical Specifications

The 2N7002BKW offers a drain-source voltage (Vds) of 60V, a continuous drain current (Id) of 300mA, and a power dissipation (Pd) of 350mW. Its gate threshold voltage (Vgs(th)) typically ranges from 0.8V to 3.0V, making it a versatile choice for various circuit designs. With its low input capacitance and gate charge, it provides efficient performance that modern electronic applications demand.

Conclusion

NXP's 2N7002BKW N-channel MOSFET stands out for its efficient power handling, high-speed switching capabilities, and robust performance. Its suitability for a broad array of applications, combined with the compact SOT-323 package, makes it a valuable component for designers looking to optimize their power management and switching solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
505+ $0.0998 $50.3990
1,070+ $0.0935 $100.0450
1,660+ $0.0904 $150.0640
2,385+ $0.0840 $200.3400
3,095+ $0.0809 $250.3855
3,865+ $0.0777 $300.3105
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 505 pcs
Order Increment : 1 pcs
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