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2N7002PT,115

Part No 2N7002PT,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.31A SOT-416
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 0.8nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250mW (Ta)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75
Dimension SC-75, SOT-416
Win Source Part Number 005729-2N7002PT,115
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2N7002PT,115 CAD Model

Description

Product Overview: 2N7002PT,115 - NXP Semiconductors

The 2N7002PT,115 is a high-performance, small-signal N-channel field-effect transistor (FET) designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This MOSFET is part of NXP's extensive range of discrete semiconductor products and is widely used in power management and switching applications due to its efficiency and reliability.

Key Features

  • Device Type: N-Channel MOSFET
  • Package: SOT-23 (TO-236AB) surface-mount package, ideal for automated assembly processes and space-constrained applications.
  • Drain-Source Voltage (Vds): 60V, providing a good balance between performance and breakdown voltage for a variety of applications.
  • Continuous Drain Current (Id): 300mA, suitable for moderate power handling requirements.
  • Rds(on): Low on-state resistance of typically 5 Ohms at Vgs of 10V, ensuring high efficiency and low conduction losses.
  • Gate Threshold Voltage (Vgs(th)): Typically 2.1V, enabling operation at lower gate drive voltages.
  • Fast Switching Speed: Excellent for high-speed switching applications, contributing to reduced switching losses.
  • ESD Protection: Built-in protection against electrostatic discharge events, enhancing the durability of the device.

Applications

The 2N7002PT,115 MOSFET is versatile and can be used in a wide array of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Motor Control Systems
  • Logic Level Conversion
  • Portable Devices
  • High-speed Switching Circuits

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The 2N7002PT,115 MOSFET is produced with stringent quality control processes, ensuring consistent performance and reliability for critical applications. Its robust construction is designed to withstand the demands of industrial, commercial, and consumer electronics.

Environmental Compliance

The 2N7002PT,115 complies with RoHS and other environmental regulations, reflecting NXP's dedication to environmental sustainability. Customers can trust that they are using a product that meets current environmental standards without compromising on performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,280+ $0.0392 $50.1760
3,110+ $0.0322 $100.1420
4,810+ $0.0312 $150.0720
6,625+ $0.0302 $200.0750
8,565+ $0.0292 $250.0980
11,455+ $0.0262 $300.1210
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 137,845 pieces
MOQ: 1280 pcs
Order Increment : 1 pcs
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