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A2I25D025NR1

Part No A2I25D025NR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description IC TRANS RF LDMOS
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features RF Mosfet LDMOS (Dual) 28 V 59 mA 2.69GHz 31.9dB 3.2W TO-270WB-17
Manufacturer NXP
Package Reel - TR
Package TO-270-17 Variant, Flat Leads
Case / Package TO-270WB-17
Family Name A2I25
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.33.0001
Other Part Number A2I25D025NR1DKR, A2I25D025NR1CT, 935315964528, A2I25D025NR1-ND, A2I25D025NR1TR
Quantity per package 500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 858884-A2I25D025NR1
Ultra Librarian 3D Model Ultra Librarian A2I25D025NR1 CAD Model

Description

The A2I25D025NR1 is a state-of-the-art RF power transistor from NXP Semiconductors, designed to deliver high performance in demanding applications. This advanced LDMOS transistor is specifically engineered for pulsed and continuous wave operations, making it an ideal choice for aerospace and defense systems, including radar applications, as well as for commercial and industrial uses.

Key Features

  • Frequency Range: The device operates within a wide frequency range, making it versatile for various RF applications.
  • High Power Output: It offers a substantial output power level, ensuring reliable performance in high-demand situations.
  • Efficiency: The A2I25D025NR1 is designed for high efficiency, which translates into lower energy consumption and reduced heat dissipation requirements.
  • Ruggedness: Its rugged construction ensures that it can withstand harsh operating conditions, including high VSWR scenarios.
  • Thermal Performance: Excellent thermal performance is guaranteed thanks to its advanced heat dissipation capabilities, ensuring stable operation even at elevated temperatures.

Applications

This RF power transistor is suitable for a range of applications, including:

  • Commercial and military radar systems
  • RF heating and plasma generation
  • Industrial, scientific, and medical (ISM) applications
  • Broadcast transmitters
  • Avionics

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the A2I25D025NR1 is no exception. It is manufactured to meet high standards of reliability and performance, ensuring that it can handle the requirements of even the most critical systems. With its robust design and NXP's quality assurance, this RF power transistor is a dependable component for any high-power RF application.

Whether you're designing a state-of-the-art radar system or developing industrial heating solutions, the A2I25D025NR1 offers the performance and reliability you need. It is a testament to NXP's innovation in the RF power transistor market, providing engineers with a powerful tool to enhance their systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $44.8614 $89.7228
4+ $36.8094 $147.2376
5+ $35.6592 $178.2960
7+ $34.5088 $241.5616
9+ $33.3585 $300.2265
12+ $29.9076 $358.8912
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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