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A2T18S160W31GSR3

Part No A2T18S160W31GSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description IC TRANS RF LDMOS / RF Mosfet LDMOS 28 V 1 A 1.88GHz 19.9dB 32W NI-780GS-2L2LA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Manufacturer NXP USA Inc.
Packaging Reel - TR
Product Status Obsolete
Transistor Type LDMOS
Frequency 1.88GHz
Gain 19.9dB
Voltage - Test 28 V
Current - Test 1 A
Power - Output 32W
Voltage - Rated 65 V
Case / Package NI-780GS-2L2LA
Supplier Device Package NI-780GS-2L2LA
Base Product Number A2T18
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number 935312705128
Standard Package 250
Win Source Part Number 1324103-A2T18S160W31GSR3
Ultra Librarian 3D Model Ultra Librarian A2T18S160W31GSR3 CAD Model

Description

The A2T18S160W31GSR3 is a cutting-edge RF power transistor designed and manufactured by NXP Semiconductors, a leader in the industry known for its high-quality and reliable products. This particular component is part of NXP's extensive portfolio of RF solutions that cater to a wide range of applications, including but not limited to, aerospace, defense, mobile, and industrial markets.

Key Features

  • Frequency Range: The A2T18S160W31GSR3 operates at 1.8 GHz, which is ideal for various RF applications that require a specific frequency for signal transmission and reception.
  • Power Output: With a high power output of 160 Watts, this transistor is capable of driving robust systems that require significant power for optimal performance.
  • Efficiency: The device boasts high efficiency, which is crucial for minimizing heat generation and power loss, leading to more reliable and sustainable operations.
  • Durability: Engineered for durability, the A2T18S160W31GSR3 can withstand harsh conditions and is suitable for use in environments that demand rugged components.
  • Package: Encased in a Gull Wing package, the transistor is designed for surface mount technology (SMT), allowing for easier integration into various circuit designs and systems.

Applications

The A2T18S160W31GSR3 is versatile and can be used in a multitude of applications. Its high power and frequency range make it an excellent choice for RF power amplifiers in cellular base stations, broadcast transmitters, and RF heating. Additionally, its ruggedness is beneficial for military and aerospace applications where reliability under extreme conditions is paramount.

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The A2T18S160W31GSR3 is no exception, as it goes through rigorous testing and quality control processes to ensure it performs to specifications and withstands the test of time.

Whether you are developing communication infrastructure, working on advanced defense systems, or innovating in the industrial sector, the A2T18S160W31GSR3 from NXP Semiconductors is a reliable and powerful choice that will help drive your projects to success.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $152.2389 $152.2389
2+ $147.1642 $294.3284
3+ $131.9403 $395.8209
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Availability: 220 pieces
Order Increment : 1 pcs
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