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A2T21H140-24SR3

Part No A2T21H140-24SR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description RF MOSFET LDMOS DUAL 28V OM780-4 / RF Mosfet 28 V 350 mA 2.11GHz ~ 2.17GHz 17.4dB 169W OM780-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Series -
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Configuration Dual
Frequency 2.11GHz ~ 2.17GHz
Gain 17.4dB
Voltage - Test 28 V
Current Rating (Amps) 10µA
Noise Figure -
Current - Test 350 mA
Power - Output 169W
Voltage - Rated 65 V
Package / Case OM780-4
Supplier Device Package OM780-4
Base Product Number A2T21
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1353437-A2T21H140-24SR3
Ultra Librarian 3D Model Ultra Librarian A2T21H140-24SR3 CAD Model

Description

The NXP A2T21H140-24SR3 is a state-of-the-art RF power transistor designed for a broad range of applications, including but not limited to RF energy, industrial, scientific, medical, and broadcast transmitter applications. This high-performance product is part of NXP's Advanced Rugged Technology (ART) series, which is renowned for its outstanding ruggedness and reliability in even the most demanding situations.

Key Features

  • Frequency Range: The A2T21H140-24SR3 operates at a frequency range of 2400 MHz, making it well-suited for various applications in the ISM band.
  • Power Output: It delivers a high power output of 140 W CW, ensuring strong performance for systems that require a significant power boost.
  • High Gain: With a gain of 21 dB, this transistor amplifies the input signal effectively, resulting in a robust and clear output signal.
  • Efficiency: The device offers high efficiency, which is critical for reducing thermal loads and improving system reliability over time.
  • Thermal Management: Advanced thermal management features are integrated into the design, helping to maintain optimal operating temperatures and prolonging the life of the transistor.
  • Ruggedness: The A2T21H140-24SR3 is built to withstand a VSWR of 10:1 through all phases, which is a testament to its rugged design and ability to handle mismatched load conditions without failure.

Applications

  • Industrial Heating
  • Plasma Generation
  • Medical Diagnostics and Treatment
  • RFID and Wireless Infrastructure
  • Broadcast Transmitters

Quality and Support

NXP is committed to providing high-quality products, and the A2T21H140-24SR3 is no exception. It comes with comprehensive technical support and documentation to assist developers in integrating the product into their systems. With its robust construction and reliable performance, the A2T21H140-24SR3 is an excellent choice for professionals seeking a high-power, efficient, and rugged RF power transistor.

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