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A2T21H360-23NR6

Part No A2T21H360-23NR6
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description RF TRANS 2.1GHZ 360W OM1230-4L2S / RF Mosfet LDMOS (Dual) 28 V 500 mA 2.11GHz ~ 2.2GHz 16.8dB 373W OM-1230-4L2L
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Manufacturer NXP USA Inc.
Packaging Reel - TR
Product Status Obsolete
Transistor Type LDMOS (Dual)
Frequency 2.11GHz ~ 2.2GHz
Gain 16.8dB
Voltage - Test 28 V
Current Rating (Amps) 10µA
Current - Test 500 mA
Power - Output 373W
Voltage - Rated 65 V
Case / Package OM-1230-4L2L
Supplier Device Package OM-1230-4L2L
Base Product Number A2T21
RoHS Status ROHS3 Compliant
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number A2T21H360-23NR6-ND,2832-A2T21H360-23NR6,935322358528
Standard Package 150
Win Source Part Number 1324098-A2T21H360-23NR6
Ultra Librarian 3D Model Ultra Librarian A2T21H360-23NR6 CAD Model

Description

The A2T21H360-23NR6 is a state-of-the-art semiconductor product from NXP Semiconductors, a leader in the industry known for its high-quality and innovative components. This particular product is designed to cater to the demanding needs of modern electronic applications, providing both reliability and performance that customers have come to expect from NXP.

Key Features

  • High Frequency Operation: The A2T21H360-23NR6 is built to operate at high frequencies, which makes it an ideal choice for RF applications, including but not limited to, wireless communication, radar systems, and satellite communication.
  • Robust Thermal Performance: Engineered for efficient heat dissipation, this product can sustain a high level of performance without compromising on longevity, even in thermally challenging conditions.
  • Advanced Technology: Utilizing the latest semiconductor technologies, the A2T21H360-23NR6 offers enhanced functionality that supports the development of cutting-edge electronic systems.
  • High Power Efficiency: Energy efficiency is at the core of this component, ensuring that systems using the A2T21H360-23NR6 are not only powerful but also cost-effective in the long run.

Applications

The versatility of the A2T21H360-23NR6 allows it to be used across a wide range of applications. Its high-frequency operation and power efficiency make it particularly suitable for:

  • Telecommunications infrastructure
  • Wireless network equipment
  • Industrial RF energy applications
  • Aerospace and defense electronics

Product Specifications

The A2T21H360-23NR6 boasts a comprehensive set of specifications that underscore its superior design and functionality:

  • Brand: NXP Semiconductors
  • Product Category: RF Semiconductors
  • Frequency Range: High Frequency
  • Package / Case: Industry Standard
  • Quality and Reliability: High

For engineers and designers looking for a reliable and high-performance semiconductor for their next project, the A2T21H360-23NR6 from NXP Semiconductors is an excellent choice that promises to deliver both in terms of quality and functionality.

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Pricing & Ordering

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1+ $429.0000 $429.0000
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Availability: 3,300 pieces
Order Increment : 1 pcs
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