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BF1212WR,115

Part No BF1212WR,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH DUAL GATE 6V SOT343R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity N-Channel Dual Gate
Frequency 400MHz
Gain 30dB
Voltage - Test 5V
Current Rating 30mA
Noise Figure 0.9dB
Current - Test 12mA
Voltage Rating 6V
Case / Package CMPAK-4
Win Source Part Number 096229-BF1212WR,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BF1212WR,115 CAD Model

Description

Introducing the NXP BF1212WR,115 Dual-Gate MOSFET

Discover the power and precision of the NXP BF1212WR,115, a high-performance dual-gate MOSFET that has been expertly designed to meet the demanding requirements of RF amplification and mixing applications. This compact, surface-mount device is a stellar choice for professionals seeking reliability and efficiency in their electronic designs.

Key Features

  • Frequency Performance: The BF1212WR,115 excels in high-frequency operations, making it an ideal component for VHF and UHF applications.
  • Dual-Gate Configuration: Its dual-gate structure provides excellent control and allows for advanced signal modulation, ensuring precise performance in RF circuits.
  • Low Noise Figure: With its low noise figure, this MOSFET minimizes interference, delivering a clear signal which is crucial for communication and sensitive RF applications.
  • Enhanced Gain: The device offers high forward transconductance, resulting in better amplification characteristics and improved overall gain.
  • Surface-Mount Package: The BF1212WR,115 comes in a small SOT-343 package, which is perfect for space-constrained applications without compromising on power.

Applications

The versatility of the NXP BF1212WR,115 makes it suitable for a wide array of applications, including:

  • RF amplifiers in telecommunications
  • High-frequency oscillators
  • Mixers and modulators in RF circuits
  • Low-noise input stages for receivers
  • Automotive applications requiring high-frequency performance

Technical Specifications

Some of the technical specifications of the BF1212WR,115 include:

  • Drain-source voltage (Vds): 8 V
  • Continuous drain current (Id): 30 mA
  • Power dissipation (Pd): 200 mW
  • Gate-source voltage (Vgs): ±8 V
  • Operating temperature range: -55°C to +150°C

With its robust design and advanced features, the NXP BF1212WR,115 dual-gate MOSFET is a top-tier component for designers looking to enhance their RF performance. Its compact size, coupled with its powerful capabilities, makes it a standout choice for your next high-frequency project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6007 $56.0245
80+ $1.3134 $105.0720
120+ $1.2724 $152.6880
165+ $1.2314 $203.1810
215+ $1.1903 $255.9145
285+ $1.0672 $304.1520
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Availability: 36,240 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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