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BFG10W/X

Part No BFG10W/X
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 10V 250MA SOT343N
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 10V
Frequency - Transition 1.9GHz
Maximum Power Dissipation 400mW
Typical Gain (hFE) (Min) 25 @ 50mA, 5V
Maximum Current Collector 250mA
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package 4-SO
Win Source Part Number 201145-BFG10W/X
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFG10W/X CAD Model

Description

The BFG10W/X, a cutting-edge RF transistor from NXP Semiconductors, is engineered to deliver high performance in a wide range of applications. This product stands out for its exceptional quality and reliability, which NXP is renowned for. The BFG10W/X is designed to operate at high frequencies, making it an ideal choice for demanding RF amplification tasks.

Key Features

  • High Frequency Operation: The BFG10W/X is optimized for high-frequency applications, ensuring efficient operation in the GHz range.
  • Power Gain: With its excellent power gain, this transistor can amplify weak signals without significant loss, maintaining signal integrity.
  • Low Noise Figure: Its low noise figure makes it suitable for sensitive RF applications where maintaining a high signal-to-noise ratio is crucial.
  • Durable Construction: Built with NXP's dedication to quality, the BFG10W/X is made to withstand the rigors of both commercial and industrial environments.
  • Surface-Mount Package: The device comes in a compact surface-mount package, allowing for easy integration into various circuit designs.

Applications

The versatility of the BFG10W/X makes it suitable for a range of applications, including:

  • RF amplifiers in telecommunications infrastructure
  • Wireless communication systems
  • Satellite communication equipment
  • High-frequency oscillators
  • Test and measurement equipment

Technical Specifications

The BFG10W/X boasts an impressive set of technical specifications that enable it to perform reliably in various RF applications:

  • Frequency Range: GHz spectrum
  • Output Power: Specified for optimal performance
  • Power Gain: High gain for efficient signal amplification
  • Noise Figure: Minimized to ensure signal clarity

For those seeking a robust and reliable RF transistor capable of handling high-frequency applications, the BFG10W/X from NXP is an excellent choice. Its combination of performance, durability, and versatility makes it a valuable component in any RF signal chain.

For more information and to view detailed technical specifications, please visit the NXP product page.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.0219 $60.1314
15+ $8.2236 $123.3540
22+ $7.9660 $175.2520
30+ $7.7096 $231.2880
39+ $7.4521 $290.6319
52+ $6.6817 $347.4484
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Availability: 22,400 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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