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BFG310W/XR,115

Part No BFG310W/XR,115
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 6V 10MA 14GHZ SOT343R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 6V
Frequency - Transition 14GHz
Noise Figure (dB Typ @ f) 1dB @ 2GHz
Gain 18dB
Maximum Power Dissipation 60mW
Typical Gain (hFE) (Min) 60 @ 5mA, 3V
Maximum Current Collector 10mA
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package CMPAK-4
Win Source Part Number 108986-BFG310W/XR,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFG310W/XR,115 CAD Model

Description

Product Overview: BFG310W/XR,115

The BFG310W/XR,115 is a cutting-edge RF Bipolar Junction Transistor (BJT) from NXP Semiconductors, a global leader in the semiconductor industry. This product is designed to meet the needs of high-frequency applications, including but not limited to, mobile communications, satellite TV receivers, GPS systems, and various RF signal amplification tasks.

Key Features

  • High Transition Frequency: With a transition frequency (fT) of 10 GHz, the BFG310W/XR,115 is optimized for high-speed signal processing, making it an ideal choice for broadband and high-frequency applications.
  • Low Noise Figure: The device boasts a low noise figure, ensuring minimal signal distortion and improved signal quality, which is crucial for communication systems where clarity is paramount.
  • High Power Gain: It offers a high power gain, which allows for significant signal amplification without the need for multiple stages, simplifying circuit design and saving space.
  • Wide Voltage Range: The transistor operates over a wide range of voltages, providing flexibility in various circuit configurations and applications.
  • Robust Package: Enclosed in an SOT-343 package, the BFG310W/XR,115 is designed for durability and reliable performance in challenging environments.

Applications

The BFG310W/XR,115 is suitable for a variety of high-frequency applications, including:

  • Wireless communication systems
  • Satellite TV receivers
  • Global Positioning Systems (GPS)
  • RF front-end amplification
  • Wideband applications in the GHz range

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products that exceed industry standards for reliability and performance. The BFG310W/XR,115 is no exception, undergoing rigorous testing to ensure it meets the stringent requirements of today's high-frequency electronic devices.

Conclusion

The BFG310W/XR,115 from NXP Semiconductors represents a blend of performance, efficiency, and reliability. Whether you're designing for advanced communication systems or high-speed signal processing, this RF BJT is engineered to provide superior performance in a compact and robust package, making it a smart choice for your next high-frequency application.

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