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BFG325/XR,215

Part No BFG325/XR,215
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 6V 35MA 14GHZ SOT143R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 6V
Frequency - Transition 14GHz
Noise Figure (dB Typ @ f) 1.1dB @ 2GHz
Gain 18.3dB
Maximum Power Dissipation 210mW
Typical Gain (hFE) (Min) 60 @ 15mA, 3V
Maximum Current Collector 35mA
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-143R
Win Source Part Number 103009-BFG325/XR,215
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFG325/XR,215 CAD Model

Description

Product Overview: BFG325/XR,215

The BFG325/XR,215 is a high-performance NPN bipolar transistor from NXP Semiconductors, crafted to meet the rigorous demands of contemporary RF amplification applications. This device is housed in an SOT89 plastic package, which is both compact and robust, making it suitable for surface-mounted technology (SMT) processes. The transistor is specifically designed to offer a combination of low noise figure and high gain, making it an ideal choice for a wide range of uses, including but not limited to, mobile communications, satellite TV receivers, GPS systems, and various other RF applications.

Key Features

  • High Transition Frequency (fT): With a transition frequency of 7 GHz, the BFG325/XR,215 is capable of operating at high frequencies, which is essential for RF and microwave applications.
  • Low Noise Figure: The low noise figure of this transistor ensures that signal integrity is maintained, particularly in sensitive RF amplification scenarios.
  • High Power Gain: The device provides a high power gain, which is crucial for achieving the desired amplification levels in RF circuits.
  • Wide Voltage Range: It operates across a broad range of voltages, offering flexibility in different circuit designs.
  • Efficiency: The BFG325/XR,215 is optimized for low power consumption, making it an energy-efficient choice for portable and battery-powered applications.

Applications

The versatile nature of the BFG325/XR,215 makes it suitable for a plethora of applications within the RF domain. It is commonly employed in:

  • RF amplifiers in mobile phones and wireless communication devices
  • Low-noise input stages in satellite receivers and GPS systems
  • Oscillator circuits in various consumer electronics
  • Other RF signal processing tasks where high performance is required

Reliability and Quality

NXP Semiconductors is known for its commitment to quality and reliability, and the BFG325/XR,215 is no exception. Each transistor is manufactured with stringent quality control measures, ensuring that it meets the high standards expected from NXP products. As a result, designers and engineers can integrate this component into their systems with confidence, knowing it will deliver consistent performance and durability.

Ordering Information

The BFG325/XR,215 is available for order under the product number 215, and it comes in tape and reel packaging, facilitating efficient assembly for high-volume production. For detailed specifications, datasheets, and ordering options, customers should contact NXP Semiconductors or their authorized distributors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3594 $61.1730
105+ $1.1157 $117.1485
165+ $1.0811 $178.3815
225+ $1.0464 $235.4400
290+ $1.0106 $293.0740
385+ $0.9067 $349.0795
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Availability: 17,200 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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