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BFG35,115

Part No BFG35,115
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 10V 150MA SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 18V
Frequency - Transition 4GHz
Maximum Power Dissipation 1W
Typical Gain (hFE) (Min) 25 @ 100mA, 10V
Maximum Current Collector 150mA
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 143297-BFG35,115
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BFG35,115 CAD Model

Description

Product Overview: NXP BFG35,115

The NXP BFG35,115 is a cutting-edge RF transistor designed for high-performance applications. This product is part of NXP's extensive range of radio frequency (RF) bipolar transistors which are well-renowned for their efficiency, reliability, and versatility. The BFG35,115 is specifically engineered to meet the rigorous demands of today's fast-paced and technology-driven landscape.

Key Features

  • High Transition Frequency (fT): The BFG35,115 boasts a high transition frequency, making it suitable for applications requiring fast switching and high-frequency operations.
  • Low Noise Figure: With its low noise figure, this transistor ensures a clear signal, minimizing the loss of information, which is crucial for communication and broadcasting applications.
  • High Power Gain: The device offers a high power gain, providing an excellent amplification factor for signals, which is essential for both transmitting and receiving applications.
  • Robustness: The BFG35,115 is built to withstand tough conditions, ensuring a long service life even in the most demanding environments.

Applications

The versatility of the NXP BFG35,115 allows it to be used in a wide array of applications, including but not limited to:

  • Wireless communications
  • Broadcast transmitters
  • RF power amplifiers
  • Telecommunications
  • Industrial, scientific, and medical (ISM) applications

Technical Specifications

The BFG35,115 has an impressive set of technical specifications that make it a top choice for designers and engineers:

  • Package: SOT223
  • Collector-Emitter Voltage (Vceo): 12 V
  • Collector Current (Ic): 500 mA
  • Total Power Dissipation (Ptot): 1.3 W
  • Transition Frequency (fT): Typically 9 GHz
  • Operating Temperature Range: -65°C to +150°C

With its combination of high-frequency performance, low noise, and power efficiency, the NXP BFG35,115 is an excellent choice for your RF design needs. It provides the reliability and performance expected from a leader in RF technology, ensuring your products operate at their best.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $62.5629 $62.5629
3+ $51.3340 $154.0020
4+ $49.7297 $198.9188
5+ $48.1254 $240.6270
7+ $46.5211 $325.6477
9+ $41.7094 $375.3846
!
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* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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