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BFG403W,115

Part No BFG403W,115
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 4.5V 17GHZ SOT343R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 4.5V
Frequency - Transition 17GHz
Noise Figure (dB Typ @ f) 1dB to 1.6dB @ 900MHz to 2GHz
Gain 20dB to 22dB
Maximum Power Dissipation 16mW
Typical Gain (hFE) (Min) 50 @ 3mA, 2V
Maximum Current Collector 3.6mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CMPAK-4
Win Source Part Number 104616-BFG403W,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFG403W,115 CAD Model

Description

Product Overview: BFG403W,115 by NXP Semiconductors

The BFG403W,115 is a high-performance, silicon NPN bipolar junction transistor (BJT) designed and manufactured by NXP Semiconductors. This discrete semiconductor device is tailored for high-frequency applications, particularly in the RF domain. It is a perfect choice for designers looking for a component that offers a combination of low noise figure and high gain at high frequencies.

Key Features

  • Frequency Performance: The BFG403W,115 operates effectively in the VHF and UHF spectrum, making it suitable for a broad range of applications in the RF field, including but not limited to telecommunications, satellite systems, and professional RF amplification.
  • Low Noise Figure: With its low noise figure, this transistor is ideal for sensitive RF circuits where signal integrity is paramount. It ensures minimal signal distortion and maintains a high-quality signal transmission.
  • High Gain: The high transition frequency (fT) of this device translates to excellent gain characteristics at high frequencies, ensuring robust amplification of RF signals.
  • Power Handling: Despite its compact size, the BFG403W,115 is capable of handling adequate power levels, suitable for various RF power amplification requirements.
  • Package: The transistor comes in an SOT343 package, which is small yet offers good thermal performance. This package is suitable for surface-mount technology (SMT), making it easy to integrate into modern PCB designs.

Applications

The BFG403W,115 is versatile and can be used in a range of applications, including:

  • Low-noise RF amplifiers
  • Oscillators
  • Mixers
  • Buffers
  • Professional communication equipment
  • Signal processing circuits in satellite systems

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the BFG403W,115 is no exception. It is manufactured to meet the highest industry standards, ensuring performance and durability for critical RF applications.

For engineers and designers looking for an RF transistor that delivers low noise, high gain, and reliable performance in a compact package, the BFG403W,115 from NXP Semiconductors is an excellent choice.

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Pricing & Ordering

Quantity Unit Price Ext. Price
645+ $0.0901 $58.1145
1,565+ $0.0739 $115.6535
2,420+ $0.0716 $173.2720
3,335+ $0.0693 $231.1155
4,315+ $0.0670 $289.1050
5,770+ $0.0601 $346.7770
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,000 pieces
MOQ: 645 pcs
Order Increment : 1 pcs
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