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BFG505/X,215

Part No BFG505/X,215
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS RF NPN 9GHZ 15V SOT143B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1.2dB to 1.9dB @ 900MHz to 2GHz
Maximum Power Dissipation 150mW
Typical Gain (hFE) (Min) 60 @ 5mA, 6V
Maximum Current Collector 18mA
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-143B
Win Source Part Number 097029-BFG505/X,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFG505/X,215 CAD Model

Description

The BFG505/X,215 is a high-performance, NPN bipolar transistor crafted by NXP Semiconductors, a leading name in the industry known for its innovative approach to technology. This transistor is designed to operate with high efficiency in a wide range of frequencies, making it a versatile component suitable for various applications in the RF domain.

Key Features

  • Frequency Performance: The BFG505/X,215 excels with its wide frequency range, capable of operating up to several GHz, which makes it ideal for high-frequency applications.
  • Low Noise Figure: With its low noise figure, this transistor ensures a clear signal, minimizing interference and enhancing performance in sensitive communication equipment.
  • High Gain: It provides a high gain-bandwidth product, ensuring that the signal is amplified without significant loss over a broad spectrum.
  • Power Efficiency: The device has been optimized for low voltage operations, leading to reduced power consumption without compromising on performance.
  • Durability: Built with robust materials, the BFG505/X,215 is designed to withstand the rigors of demanding environments, ensuring a long operational life.

Applications

The versatility of the BFG505/X,215 makes it suitable for a diverse array of applications. It is commonly used in:

  • Mobile and wireless communication
  • Satellite TV receivers
  • Professional radio equipment
  • RF front-end modules
  • Low-noise amplifiers in antenna systems

Product Specifications

Parameter Value
Configuration Single
Transistor Polarity NPN
Collector-Emitter Voltage VCEO Max 15 V
DC Collector/Base Gain hfe Min 40 at 5 mA, 5 V
Power Dissipation 300 mW
Operating Temperature -65 to +150 °C

The BFG505/X,215 is not just a testament to NXP's commitment to quality but is also a reflection of the company's dedication to providing solutions that drive innovation across industries. Whether you're designing the next generation of communication systems or seeking to enhance existing technology, this transistor is a reliable and efficient choice.

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Pricing & Ordering

Quantity Unit Price Ext. Price
620+ $0.0936 $58.0320
1,520+ $0.0762 $115.8240
2,345+ $0.0739 $173.2955
3,230+ $0.0716 $231.2680
4,170+ $0.0693 $288.9810
5,560+ $0.0624 $346.9440
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Availability: 153,000 pieces
MOQ: 620 pcs
Order Increment : 1 pcs
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