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BFR93AR,215

Part No BFR93AR,215
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 35MA 12V 6GHZ SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 6GHz
Noise Figure (dB Typ @ f) 1.9dB to 3dB @ 1GHz to 2GHz
Maximum Power Dissipation 300mW
Typical Gain (hFE) (Min) 40 @ 30mA, 5V
Maximum Current Collector 35mA
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 104927-BFR93AR,215
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFR93AR,215 CAD Model

Description

Product Overview: BFR93AR,215 from NXP Semiconductors

The BFR93AR,215 is a high-performance NPN silicon planar epitaxial microwave bipolar transistor designed by NXP Semiconductors. This device is specifically engineered to deliver exceptional performance in high-frequency applications. With its excellent gain-bandwidth product and high transition frequency, the BFR93AR,215 is an ideal choice for a wide range of RF applications, including but not limited to telecommunications, satellite communication systems, and professional RF amplification.

Key Features

  • High Transition Frequency (f<sub>T): With a transition frequency of 5 GHz, the BFR93AR,215 is capable of operating effectively in high-frequency applications, making it suitable for microwave and RF designs.
  • Low Noise Figure: The low noise figure of this transistor allows for its use in sensitive RF signal amplification, ensuring clear signal transmission and reception.
  • High Power Gain: It provides a high power gain that is essential for amplifying weak signals without significant loss of quality or performance.
  • Robustness: The device is encapsulated in a four-pin, SOT-223 plastic package, which offers a robust and durable design that can withstand the demands of various operating environments.

Applications

The BFR93AR,215 is versatile and can be utilized in a variety of applications. Its primary use cases include:

  • RF amplification in telecommunications
  • Local Oscillator (LO) circuits in receiver and transmitter modules
  • Satellite communication systems
  • Professional mobile radio applications
  • High-frequency oscillators

Product Specifications

  • Product Category: RF Bipolar Transistors
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 12 V
  • Emitter- Base Voltage VEBO: 3 V
  • Maximum DC Collector Current: 50 mA
  • Power Dissipation: 1.5 W
  • Packaging: Reel, Cut Tape, MouseReel

The BFR93AR,215 transistor's combination of high-speed operation, low noise, and high power gain makes it an excellent choice for designers and engineers looking to enhance their RF and microwave circuit designs. NXP's commitment to quality ensures that this component will provide reliable performance in even the most demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1964 $57.9380
715+ $0.1617 $115.6155
1,115+ $0.1559 $173.8285
1,530+ $0.1513 $231.4890
1,970+ $0.1467 $288.9990
2,655+ $0.1305 $346.4775
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 11,500 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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