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BFU520R

Part No BFU520R
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description RF TRANS NPN 12V 10.5GHZ SOT143B  /  RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr NXP USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 10.5GHz
Noise Figure (dB Typ @ f) 0.65dB @ 900MHz
Gain 20dB
Power - Max 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 8V
Current - Collector (Ic) (Max) 30mA
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-253-4, TO-253AA
Supplier Device Package SOT-143B
Base Product Number BFU520
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names BFU520R-ND,568-11504-1,568-11504-6,568-11504-2,934067702215
Standard Package 3,000
Win Source Part Number 1026154-BFU520R
Ultra Librarian 3D Model Ultra Librarian BFU520R CAD Model

Description

The NXP BFU520R is a high-performance RF bipolar transistor designed to meet the demanding requirements of today's wireless communication systems. This NPN wideband silicon germanium transistor is optimized for high-frequency applications, providing exceptional performance in terms of gain, linearity, and efficiency. It is housed in a robust, leadless 4-pin package that ensures reliable operation even in challenging environments.

Key Features

  • Frequency Range: The BFU520R operates at a wide frequency range, making it suitable for a variety of RF applications, from base stations to portable devices.
  • High Gain: With its high gain performance, this transistor can amplify weak signals without significant signal degradation, ensuring clear and reliable communication.
  • Low Noise Figure: The low noise figure of the BFU520R minimizes the amount of added noise in the signal chain, critical for high-quality audio and data transmission.
  • High Linearity: The linearity of the device allows for accurate signal reproduction, which is especially important for advanced modulation schemes used in modern communication protocols.
  • Power Efficiency: Designed with power efficiency in mind, the BFU520R helps reduce power consumption and heat dissipation in electronic circuits, contributing to longer battery life and enhanced system reliability.
  • Robust Design: The transistor's robust design ensures stability and performance longevity, making it a reliable choice for both commercial and industrial applications.

Applications

The NXP BFU520R is versatile and can be used in a variety of applications. It is ideal for high-frequency RF circuits such as amplifiers, oscillators, and mixers. With its superior characteristics, it is particularly well-suited for use in wireless communication devices, including mobile phones, wireless LANs, GPS receivers, and satellite communication systems. Additionally, it can be utilized in professional radio equipment, and as a part of RF modules in consumer electronics, ensuring optimal performance across a wide spectrum of devices.

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