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BFU530XAR

Part No BFU530XAR
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS RF NPN 12V 40MA SOT-143B / Trans RF BJT NPN 16V 0.065A 450mW Automotive 4-Pin(3+Tab) SOT-143B T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Series Automotive, AEC-Q101
Packaging Reel package
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 12V
Frequency - Transition 11GHz
Noise Figure (dB Typ @ f) 0.7dB @ 900MHz
Gain 22dB
Power - Max 450mW
DC Current Gain (hFE) (Minimum) @ Ic, Vce 60 @ 10mA, 8V
Current - Collector (Ic) (Maximum) 40mA
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting SMD
Package TO-253-4, TO-253AA
Manufacturer Package SOT-143B
Win Source Part Number 769986-BFU530XAR
Popularity Medium
Supply and Demand Status Limited
Family Name BFU530X
Introduction Date October 05, 2011
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian BFU530XAR CAD Model

Description

The BFU530XAR is a state-of-the-art, high-performance NPN wideband silicon germanium RF transistor from NXP Semiconductors. Designed to meet the demanding requirements of high-frequency applications, this device is an excellent choice for a wide range of applications, including but not limited to wireless communication, satellite systems, and RF front-end modules.

Key Features:

  • Frequency Range: The BFU530XAR is optimized for high-frequency operations, capable of delivering outstanding performance up to 9 GHz.
  • Low Noise Figure: It boasts an extremely low noise figure, which is critical for high-sensitivity receivers in communication systems.
  • High Gain: The device offers high gain levels, ensuring strong signal amplification which is vital for both transmitting and receiving paths in RF circuits.
  • High Linearity: With its high linearity, the BFU530XAR minimizes distortion in complex signal environments, making it suitable for advanced modulation schemes.

Applications:

  • Low noise amplifiers (LNAs) in cellular and satellite communication.
  • Global Positioning System (GPS) receivers.
  • Oscillators and mixers in RF circuitry.
  • High-frequency signal amplification in broadband applications.

Package and Quality:

The BFU530XAR is available in a compact, leadless 4-pin package, which ensures minimal footprint and is suitable for high-density circuit designs. NXP's commitment to quality means that this product is manufactured in state-of-the-art facilities, ensuring high reliability and performance consistency.

Environmental Compliance:

As with all NXP products, the BFU530XAR complies with the RoHS directive, underlining NXP's dedication to environmental sustainability and the reduction of hazardous substances in electronic components.

Conclusion:

With its combination of high-frequency operation, low noise, high gain, and linearity, the BFU530XAR from NXP Semiconductors is an exemplary choice for designers looking to enhance their RF designs with a reliable and powerful transistor. Its compact footprint and compliance with environmental standards further solidify its position as a go-to component in the industry.

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