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BUK655R0-75C,127

Part No BUK655R0-75C,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Gate Charge 177nC @ 10V
Max Input Capacitance 11400pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 263W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025174-BUK655R0-75C,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUK655R0-75C,127 CAD Model

Description

The BUK655R0-75C,127 is a state-of-the-art MOSFET transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This product is part of NXP's extensive portfolio of field-effect transistors, which are known for their high efficiency, reliability, and performance in a wide range of applications.

Key Features

  • Low On-Resistance: The BUK655R0-75C,127 boasts an exceptionally low on-resistance, which ensures minimal power loss and higher efficiency during operation.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET provides rapid transition performance, which is crucial for power regulation and conversion systems.
  • Power-SO8 Package: Housed in a compact Power-SO8 package, the BUK655R0-75C,127 is optimized for space-constrained applications while still delivering robust power handling capabilities.
  • High Continuous Current Rating: With a high continuous current rating, this MOSFET can handle significant current loads, making it suitable for high-power applications.
  • Thermal Management: The device features excellent thermal characteristics, ensuring stable performance even under high temperature operating conditions.

Applications

The versatility of the BUK655R0-75C,127 allows it to be used in a variety of applications, including but not limited to:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Battery-powered devices
  • Automotive applications

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The BUK655R0-75C,127 is produced with stringent quality control measures and reliability testing to ensure it meets the industry standards and customer expectations. Whether you are designing a new power system or upgrading an existing one, the BUK655R0-75C,127 from NXP is an excellent choice for a high-performance MOSFET.

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