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AO4914_101

Part No AO4914_101
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 20.5 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 865pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 141248-AO4914_101
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AO4914_101 CAD Model

Description

AO4914_101 - Versatile Power MOSFET

The AO4914_101 is a high-performance Power MOSFET designed to deliver superior efficiency and reliability in a variety of applications. Its robust construction and advanced technology make it ideal for use in power management systems.

  • Switching Power Supplies: Ideal for enhancing the efficiency of power converters.
  • DC-DC Converters: Great for voltage regulation purposes in various electronic devices.
  • Battery Management Systems: Essential for improving the performance and longevity of battery-operated devices.

Features and Benefits:

  • Low On-Resistance: Ensures minimal power loss, enhancing overall device efficiency.
  • High-Speed Switching: Offers rapid transition times for dynamic power environments.
  • Thermally Efficient Package: Improves heat dissipation, prolonging component life.

Additional Details: This component is suitable for a range of electronic designs, from simple power control circuits to complex industrial devices, offering reliability and efficiency remarkably beneficial in modern electronics.

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