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BUK7108-40AIE,118

Part No BUK7108-40AIE,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3140pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Current Sensing
Power Dissipation (Max) 221W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-426
Dimension TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Win Source Part Number 121796-BUK7108-40AIE,118
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian BUK7108-40AIE,118 CAD Model

Description

Product Overview: BUK7108-40AIE,118 by NXP Semiconductors

The BUK7108-40AIE,118 is a high-performance, N-channel TrenchMOS™ standard level FET manufactured by the renowned semiconductor company, NXP Semiconductors. This power MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including automotive systems, power management, and industrial controls.

With a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 75A, the BUK7108-40AIE,118 is capable of handling high current demands while maintaining a low on-state resistance (RDS(on)). This low resistance minimizes power loss and heat generation, making it suitable for high-efficiency power conversion and switching applications.

The device comes in a compact, surface-mount LFPAK56 (Power-SO8) package, which ensures a small footprint on the PCB while offering excellent thermal performance. The package is designed to handle high thermal and mechanical stress, making it a robust choice for demanding environments.

One of the key features of the BUK7108-40AIE,118 is its logic level compatible gate drive, which allows it to be driven directly from microcontrollers and other logic devices without the need for additional driver circuits. This simplifies design and reduces component count, leading to cost savings and a more compact system design.

Furthermore, this MOSFET is characterized by fast switching performance, which is crucial for reducing switching losses and improving the efficiency of power conversion systems. Its ruggedness is enhanced by features such as an integrated diode for reverse voltage protection, which safeguards the device against potential damage caused by reverse currents.

For automotive applications, the BUK7108-40AIE,118 is AEC-Q101 qualified, ensuring that it meets the stringent requirements for automotive-grade reliability and performance. This qualification highlights the device's suitability for use in the harsh environments typically found in automotive applications, where temperature extremes and high vibration levels are common.

In summary, the BUK7108-40AIE,118 from NXP Semiconductors is a versatile and robust power MOSFET that offers a combination of high current handling, low on-state resistance, and fast switching performance, all packed in a space-saving, thermally efficient package. Whether it's for automotive electronics, power supply units, or industrial automation, this MOSFET is engineered to deliver top-tier performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9589 $58.7670
75+ $1.6078 $120.5850
115+ $1.5569 $179.0435
155+ $1.5073 $233.6315
200+ $1.4565 $291.3000
270+ $1.3063 $352.7010
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,595 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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