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BUK7520-55A

Part No BUK7520-55A
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
Sample
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Manufacturer NXP
Win Source Part Number 1156109-BUK7520-55A
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Balance
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Description

Product Overview: BUK7520-55A

The BUK7520-55A is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is well-suited for a wide range of applications, particularly in the automotive industry, where high efficiency and reliability are paramount.

Key Features

  • Low On-State Resistance: The BUK7520-55A boasts an exceptionally low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Current Capability: With the ability to handle continuous currents up to 75A, this MOSFET is capable of supporting high-power applications with ease.
  • Standard Level Gate Drive: The device is compatible with standard level gate drive voltages, making it versatile and easy to interface with existing control circuits.
  • Robust Thermal Performance: The BUK7520-55A is designed to maintain its performance over a wide temperature range, ensuring reliability even under harsh operating conditions.
  • Automotive Grade: Engineered to meet the stringent requirements of the automotive industry, this product is AEC-Q101 qualified, signifying its high reliability and suitability for automotive applications.

Applications

The BUK7520-55A is ideal for a variety of applications, including but not limited to:

  • Automotive systems such as engine control units, power steering, and braking systems
  • DC/DC converters and power management modules
  • Motor drives and controllers
  • Load switches
  • Battery management systems

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 55V Continuous Drain Current (I<sub>D) 75A On-State Resistance (R<sub>DS(on)) 8.0 mΩ Package TO-220AB

With its robust design and impressive electrical characteristics, the BUK7520-55A from NXP stands out as a reliable choice for designers who require a high-quality power MOSFET for their demanding applications.

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