The BUK762R6-40E118 is a high-performance, N-channel TrenchMOS™ standard level FET designed and manufactured by NXP Semiconductors. This field-effect transistor is engineered to deliver efficient power management and conversion in a compact package, making it an ideal choice for a wide range of applications.

Key Features

• Low On-State Resistance: The BUK762R6-40E118 boasts an extremely low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, especially in high-current applications.
• High-Speed Switching: With its fast switching capabilities, this FET is suitable for high-frequency power switching applications, contributing to better performance and reduced energy waste.
• Standard Level Gate Drive: The device operates with standard level gate drive voltages, making it compatible with a wide range of drive circuits and simplifying the design of power management systems.
• Robust Thermal Performance: The BUK762R6-40E118 is encapsulated in a LFPAK56 (Power-SO8) package, which offers excellent thermal conduction and helps to maintain stability even under high power and temperature conditions.

Applications

This versatile FET is suitable for a variety of applications, including but not limited to:

• DC/DC converters
• Motor drives
• Power management systems
• Automotive applications
• Switching regulators

Product Specifications

The BUK762R6-40E118 is designed to meet the stringent requirements of modern electronic systems, offering a combination of high efficiency, reliability, and versatility. Whether for automotive, industrial, or consumer electronics, this NXP FET is a solid choice for designers looking to optimize their power management solutions.