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BUK7880-55,135

Part No BUK7880-55,135
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 3.5A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 500pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 238254-BUK7880-55,135
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK7880-55,135 CAD Model

Description

The NXP BUK7880-55,135 is a high-performance, N-channel TrenchMOS™ standard level Field-Effect Transistor (FET) designed for automotive and general-purpose switching applications. This power MOSFET is part of NXP's renowned TrenchMOS portfolio, which is acclaimed for providing state-of-the-art technology to achieve low on-state resistance and high switching performance.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The device boasts a low R<sub>DS(on), which enhances its efficiency by minimizing power losses during operation.
  • High-Speed Switching: The BUK7880-55,135 is optimized for fast switching, making it suitable for high-frequency applications.
  • High Current Capability: With the ability to handle significant current levels, this MOSFET is ideal for demanding applications that require robust current handling.
  • Improved Thermal Performance: The package design and materials used allow for excellent thermal performance, ensuring reliability even under high-temperature conditions.
  • Robust Package: Encased in a durable SOT428 (D-PAK) package, the BUK7880-55,135 is designed to withstand harsh environments, making it suitable for automotive applications.

Applications

The versatility of the NXP BUK7880-55,135 makes it an excellent choice for a wide range of applications. It is particularly well-suited for:

  • Automotive systems such as engine control units, power steering, and DC/DC converters.
  • Power management solutions that require efficient DC switching.
  • Load switching in various electronic devices.
  • Motor control circuits in both industrial and consumer electronics.

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 55V Continuous Drain Current (I<sub>D) 75A Power Dissipation (P<sub>tot) 110W Operating Temperature Range -55°C to +175°C

In conclusion, the NXP BUK7880-55,135 MOSFET is a reliable and efficient solution for a variety of applications that demand high performance and durability. Its robust design and excellent thermal management make it a preferred choice for engineers and designers looking for a high-quality power MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.6348 $58.1568
39+ $2.9822 $116.3058
60+ $2.8898 $173.3880
83+ $2.7963 $232.0929
107+ $2.7027 $289.1889
143+ $2.4232 $346.5176
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Availability: 4,200 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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