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BUK7C08-55AITE

Part No BUK7C08-55AITE
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 116nC @ 10V
Max Input Capacitance 4200pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Current Sensing
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 201635-BUK7C08-55AITE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK7C08-55AITE CAD Model

Description

NXP BUK7C08-55AITE Power MOSFET

The NXP BUK7C08-55AITE is a high-performance Power MOSFET designed to deliver efficiency and reliability in a wide range of applications. This robust semiconductor device features TrenchMOS technology, which is well-known for its low on-state resistance and high switching speed, making it an ideal choice for power conversion and management tasks in modern electronic circuits.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The device boasts an exceptionally low R<sub>DS(on) of 8.7 mΩ at V<sub>GS = 10 V, which enhances its overall efficiency by minimizing conduction losses.
  • High Continuous Drain Current (I<sub>D): With a continuous drain current of 55 A, the BUK7C08-55AITE can handle significant power levels, suitable for demanding applications.
  • High-Speed Switching: TrenchMOS technology facilitates fast switching speeds, contributing to improved performance in high-frequency power conversion systems.
  • Enhanced Thermal Performance: The device is housed in a TO-220AB package, known for its excellent thermal characteristics, ensuring stable operation even under high temperature conditions.
  • Gate Charge (Q<sub>G): The MOSFET has a low gate charge, which reduces the energy required to turn the transistor on and off, thereby improving the power efficiency of the overall system.

Applications

The BUK7C08-55AITE is versatile and can be used in various applications such as:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switch-mode power supplies (SMPS)

Additional Information

This NXP Power MOSFET is also characterized by its robustness and reliability, featuring built-in protection against overcurrent and thermal overload. It is compliant with the stringent automotive industry standards, making it suitable for vehicular electronics that require high reliability and performance under harsh conditions. With its combination of efficiency, speed, and durability, the BUK7C08-55AITE is a compelling choice for designers looking to optimize their power systems.

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