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BUK7C10-75AITE,118

Part No BUK7C10-75AITE,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description NEXPERIA BUK7C10-75 - 75A, 75V, / N-Channel 75 V 75A (Tc) 272W (Tc) Surface Mount D2PAK-7
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Rohs State Need to verify
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP Semiconductors
Series Automotive, AEC-Q101, TrenchMOS™
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V
FET Feature Current Sensing
Power Dissipation (Max) 272W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Standard Package 1
MSL Level Vendor Undefined
REACH Status REACH Unaffected
Win Source Part Number 1346202-BUK7C10-75AITE,118
Ultra Librarian 3D Model Ultra Librarian BUK7C10-75AITE,118 CAD Model

Description

Introducing the BUK7C10-75AITE,118 from NXP Semiconductors

The BUK7C10-75AITE,118 is a cutting-edge TrenchMOS™ logic level FET designed and manufactured by the renowned NXP Semiconductors. This high-performance product is a testament to NXP's commitment to providing advanced solutions for a wide range of electronic applications. With its logic level gate drive, the BUK7C10-75AITE,118 ensures ease of use and compatibility with standard logic ICs, making it an ideal choice for designers looking to simplify circuit complexity.

At the heart of this device is NXP's state-of-the-art TrenchMOS technology, which enables the BUK7C10-75AITE,118 to offer exceptional efficiency and performance. This technology has been optimized to reduce on-state resistance (Rds(on)) and gate charge (Qg), leading to lower conduction and switching losses. As a result, this FET is capable of handling continuous drain currents of up to 75A, with a drain-source voltage (Vds) of 100V, making it suitable for high-power applications.

The BUK7C10-75AITE,118 comes in a robust and compact DPAK package, which not only ensures a minimal footprint on your PCB but also provides excellent thermal performance. The package design is tailored for easy mounting and is compatible with automated assembly processes, thereby reducing manufacturing time and costs.

Key features of the BUK7C10-75AITE,118 include:

  • Low threshold voltage for ease of drive
  • High continuous current rating of 75A
  • 100V drain-source voltage capability
  • Low Rds(on) for increased efficiency
  • Fast switching performance with low gate charge
  • Robust DPAK package for improved thermal management

With its robust performance and high reliability, the BUK7C10-75AITE,118 is an excellent choice for power management tasks in automotive, industrial, and consumer electronics. Whether it's for motor drives, DC-DC converters, or power distribution systems, this NXP FET is designed to deliver the power and efficiency your applications demand.

Choose the BUK7C10-75AITE,118 for your next project and experience the quality and performance that NXP Semiconductors is known for. Elevate your design with this superior logic level FET and ensure your products stand out in the competitive electronics market.

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