The NXP BUK7E2R3-40C is a high-performance, N-channel TrenchMOS™ standard level FET designed for use in automotive and general-purpose switching applications. This power MOSFET is part of NXP's leading-edge TrenchMOS technology, which is renowned for its low on-state resistance (R<sub>ds(on)), high switching speed, and excellent thermal performance.

Key Features

• TrenchMOS technology for superior switching performance
• Low threshold voltage (V<sub>th) for improved efficiency
• Standard level gate drive for ease of use
• High continuous drain current (I<sub>D) of 40 A
• Low on-state resistance (R<sub>ds(on)) of 2.3 mΩ at V<sub>GS = 10 V
• Robust and reliable design with an operating temperature range of -55°C to +175°C
• Qualified according to AEC-Q101 standards for automotive reliability
• Surface-mounted package: LFPAK56 (Power-SO8)

Applications

The BUK7E2R3-40C has been engineered to meet the stringent requirements of the automotive industry but is also well-suited for a broad range of other high-power applications. Typical uses include:

• Automotive systems such as engine control units, power steering, and DC/DC converters
• Motor drive controls
• Power management circuits
• Switch-mode power supplies (SMPS)
• Load switching

Quality and Reliability

NXP's commitment to quality and reliability is evident in the BUK7E2R3-40C, which is designed to meet the rigorous Automotive Electronics Council (AEC) Q101 standards. This ensures that the device can withstand the harsh conditions of automotive environments, providing a reliable and durable solution for manufacturers.

With its combination of efficiency, performance, and robustness, the NXP BUK7E2R3-40C MOSFET is an ideal choice for designers looking to optimize their power management and switching applications in both automotive and general-purpose settings.